By Dimitris Gizopoulos
This is a brand new kind of edited quantity within the Frontiers in digital checking out publication sequence dedicated to fresh advances in digital circuits trying out. The e-book is a complete elaboration on vital issues which seize significant examine and improvement efforts this present day. "Hot" themes of present curiosity to check know-how neighborhood were chosen, and the authors are key members within the corresponding topics.
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Extra resources for Advances in Electronic Testing: Challenges and Methodologies
From the early 1980s to the mid 1990s, these advantages led to the widespread adoption of IDDQ testing (measurement of the static power supply current – meant to be zero in CMOS). 35u level and below, however, it became clear that IDDQ testing was becoming increasingly difficult, and 14 15 16 Fault grading is the process of simulating faults to determine fault coverage. An n-detect test set forces each fault to be detected n different ways rather than just once. Current-based testing looks for defects in larger areas than a node which voltage-based tests examine.
At a 50uA threshold (considered reasonable at the time), more parts fail IDDQ than all other tests combined. (2) The number of IDDQ fails is strongly tied to the threshold chosen. (3) A small number of IDDQ fails also fail atspeed tests (note how 25 AC scan and functional fails becomes 22 when the threshold is reduced from 200uA to 50uA). Again, these results were used to justify multiple, sometimes conflicting, actions. At HP, they spurred the effort that eventually lead to the current ratios technique, while for others they showed that IDDQ was a wasteful test that should be removed from production.
Other approaches include dynamic current measurement, energy consumption, and thermal testing. In each of these cases defect observation is implicit and activation is explicit, so fault models developed for IDDQ testing will continue to work. Leakage Induced Faults In 130nm technology and below, leakage is a significant problem, especially in the fast process corner and at high temperatures. Leakage is mainly dominated 11 by subthreshold leakage, although gate leakage is a significant factor at lower temperatures.
Advances in Electronic Testing: Challenges and Methodologies by Dimitris Gizopoulos